Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime
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چکیده
Thin-body transistors with silicide source/drains were fabricated with gate-lengths down to 15nm. Complementary low-barrier silicides were used to reduce contact and series resistance. Minimum gate-length transistors with Tox=40Å show PMOS |Idsat|=270μA/μm and NMOS |Idsat|=190μA/μm with Vds=1.5V, |Vg-Vt|=1.2V and, Ion/Ioff>10 . A simple transmission model, fitted to experimental data, is used to investigate effects of oxide scaling and extension doping.
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تاریخ انتشار 2000